Synthesis of Ultrathin, High-k polymer dielectrics via initiated chemical vapor deposition (iCVD) for Flexible and Low-power Thin-Film Transistor

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dc.contributor.authorKang, Juyeonko
dc.contributor.authorChoi, Junhwanko
dc.contributor.authorJoo, Munkyuko
dc.contributor.authorSeong, Hyejeongko
dc.contributor.authorPak, Kwanyongko
dc.contributor.authorPark, Hongkeunko
dc.contributor.authorPark, Chan Wooko
dc.contributor.authorIm, Sung Gapko
dc.date.accessioned2020-12-21T09:10:33Z-
dc.date.available2020-12-21T09:10:33Z-
dc.date.created2020-12-02-
dc.date.issued2019-12-07-
dc.identifier.citationThe 32nd International Symposium on Chemical Engineering (ISChE 2019)-
dc.identifier.urihttp://hdl.handle.net/10203/278852-
dc.languageEnglish-
dc.publisherThe Korean Institute of Chemical Engineers-
dc.titleSynthesis of Ultrathin, High-k polymer dielectrics via initiated chemical vapor deposition (iCVD) for Flexible and Low-power Thin-Film Transistor-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 32nd International Symposium on Chemical Engineering (ISChE 2019)-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationChungnam National University-
dc.contributor.localauthorIm, Sung Gap-
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CBE-Conference Papers(학술회의논문)
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