Vertical tunneling field effect transistor based on Si-MoS2 van der Waals heterojunction

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dc.contributor.authorShin, Gwang Hyukko
dc.contributor.authorPark, Haminko
dc.contributor.authorLee, Khang Junko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2020-12-19T05:30:17Z-
dc.date.available2020-12-19T05:30:17Z-
dc.date.created2020-12-04-
dc.date.issued2019-10-08-
dc.identifier.citationRPGR 2019: Recent Progress in Graphene and Two-dimensional Materials Research Conference-
dc.identifier.urihttp://hdl.handle.net/10203/278759-
dc.languageEnglish-
dc.publisherRecent Progress in Graphene and Two-dimensional Materials Research-
dc.titleVertical tunneling field effect transistor based on Si-MoS2 van der Waals heterojunction-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameRPGR 2019: Recent Progress in Graphene and Two-dimensional Materials Research Conference-
dc.identifier.conferencecountryJA-
dc.identifier.conferencelocationMatsue-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorShin, Gwang Hyuk-
dc.contributor.nonIdAuthorPark, Hamin-
dc.contributor.nonIdAuthorLee, Khang Jun-
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EE-Conference Papers(학술회의논문)
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