DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Hyun Bae | ko |
dc.contributor.author | Shin, Gwang Hyuk | ko |
dc.contributor.author | Lee, Khang June | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2020-12-10T08:50:21Z | - |
dc.date.available | 2020-12-10T08:50:21Z | - |
dc.date.created | 2020-04-04 | - |
dc.date.issued | 2020-07 | - |
dc.identifier.citation | ADVANCED ELECTRONIC MATERIALS, v.6, no.7, pp.2000091 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | http://hdl.handle.net/10203/278145 | - |
dc.description.abstract | A p-type tunneling field-effect transistor is demonstrated based on a van der Waals vertical heterostructure of WSe2 and MoS2, utilizing the ion gel dielectric as top gate. Band-to-band tunneling is achieved by modulating the band alignment of the heterojunction of WSe2 and MoS2 with gating the WSe2 channel through ion gel top gate. A fabricated tunneling field-effect transistor shows a minimum subthreshold swing of 36 mV dec(-1) and ON/OFF current ratio of 10(6) at room temperature. Furthermore, evidence of band-to-band tunneling is clearly confirmed through temperature dependent I-V characteristics. This work holds considerable promise for the low-power computational devices based on integrated circuits. | - |
dc.language | English | - |
dc.publisher | WILEY | - |
dc.title | Vertical-Tunneling Field-Effect Transistor Based on WSe2-MoS2 Heterostructure with Ion Gel Dielectric | - |
dc.type | Article | - |
dc.identifier.wosid | 000530860100001 | - |
dc.identifier.scopusid | 2-s2.0-85085079119 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 2000091 | - |
dc.citation.publicationname | ADVANCED ELECTRONIC MATERIALS | - |
dc.identifier.doi | 10.1002/aelm.202000091 | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Jeon, Hyun Bae | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | heterostructures | - |
dc.subject.keywordAuthor | ion gel dielectrics | - |
dc.subject.keywordAuthor | MoS | - |
dc.subject.keywordAuthor | (2) | - |
dc.subject.keywordAuthor | tunneling transistors | - |
dc.subject.keywordAuthor | WSe | - |
dc.subject.keywordAuthor | (2) | - |
dc.subject.keywordPlus | ELECTRONICS | - |
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