A 0.0082-mm², 192-nW Single BJT Branch Bandgap Reference in 0.18-μm CMOS
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Myungjun | ko |
| dc.contributor.author | Cho, SeongHwan | ko |
| dc.date.accessioned | 2020-11-26T08:50:06Z | - |
| dc.date.available | 2020-11-26T08:50:06Z | - |
| dc.date.created | 2020-11-26 | - |
| dc.date.created | 2020-11-26 | - |
| dc.date.created | 2020-11-26 | - |
| dc.date.issued | 2020-09 | - |
| dc.identifier.citation | IEEE SOLID-STATE CIRCUITS LETTERS, v.3, pp.426 - 429 | - |
| dc.identifier.issn | 2573-9603 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/277658 | - |
| dc.description.abstract | In this letter, we propose a bandgap reference (BGR) with a single BJT branch and a PTAT-embedded amplifier with a cascode Miller frequency compensation. As implemented in 0.18-μm CMOS, the proposed BGR occupies a small area of 0.0082 mm2 and low power consumption of 192 nW while achieving voltage spread (σ/μ) of 0.33% and temperature coefficient of 26.3 ppm/°C over -40 °C~140 °C, without any trimming. | - |
| dc.language | English | - |
| dc.publisher | IEEEIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | A 0.0082-mm², 192-nW Single BJT Branch Bandgap Reference in 0.18-μm CMOS | - |
| dc.type | Article | - |
| dc.identifier.scopusid | 2-s2.0-85091276397 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 3 | - |
| dc.citation.beginningpage | 426 | - |
| dc.citation.endingpage | 429 | - |
| dc.citation.publicationname | IEEE SOLID-STATE CIRCUITS LETTERS | - |
| dc.identifier.doi | 10.1109/LSSC.2020.3025226 | - |
| dc.contributor.localauthor | Cho, SeongHwan | - |
| dc.description.isOpenAccess | N | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | Analog circuit | - |
| dc.subject.keywordAuthor | bandgap reference | - |
| dc.subject.keywordAuthor | frequency compensation | - |
| dc.subject.keywordAuthor | low power | - |
| dc.subject.keywordAuthor | temperature compensation | - |
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