DC Field | Value | Language |
---|---|---|
dc.contributor.author | Song, Kyungmi | ko |
dc.contributor.author | Lee, Kyung-Jin | ko |
dc.date.accessioned | 2020-11-23T01:30:13Z | - |
dc.date.available | 2020-11-23T01:30:13Z | - |
dc.date.created | 2020-11-18 | - |
dc.date.issued | 2015-08 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.118, no.5 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/277455 | - |
dc.description.abstract | We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM. (C) 2015 AIP Publishing LLC. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories | - |
dc.type | Article | - |
dc.identifier.wosid | 000359376700017 | - |
dc.identifier.scopusid | 2-s2.0-84938781384 | - |
dc.type.rims | ART | - |
dc.citation.volume | 118 | - |
dc.citation.issue | 5 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.4928205 | - |
dc.contributor.localauthor | Lee, Kyung-Jin | - |
dc.contributor.nonIdAuthor | Song, Kyungmi | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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