Spin-orbit torques from interfacial spin-orbit coupling for various interfaces

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dc.contributor.authorKim, Kyoung-Whanko
dc.contributor.authorLee, Kyung-Jinko
dc.contributor.authorSinova, Jairoko
dc.contributor.authorLee, Hyun-Wooko
dc.contributor.authorStiles, M. D.ko
dc.date.accessioned2020-11-20T08:30:08Z-
dc.date.available2020-11-20T08:30:08Z-
dc.date.created2020-11-18-
dc.date.created2020-11-18-
dc.date.issued2017-09-
dc.identifier.citationPHYSICAL REVIEW B, v.96, no.10-
dc.identifier.issn2469-9950-
dc.identifier.urihttp://hdl.handle.net/10203/277438-
dc.description.abstractWe use a perturbative approach to study the effects of interfacial spin-orbit coupling in magnetic multilayers by treating the two-dimensional Rashba model in a fully three-dimensional description of electron transport near an interface. This formalism provides a compact analytic expression for current-induced spin-orbit torques in terms of unperturbed scattering coefficients, allowing computation of spin-orbit torques for various contexts, by simply substituting scattering coefficients into the formulas. It applies to calculations of spin-orbit torques for magnetic bilayers with bulk magnetism, those with interface magnetism, a normal-metal/ferromagnetic insulator junction, and a topological insulator/ferromagnet junction. It predicts a damping like component of spin-orbit torque that is distinct from any intrinsic contribution or those that arise from particular spin relaxation mechanisms. We discuss the effects of proximity-induced magnetism and insertion of an additional layer and provide formulas for in-plane current, which is induced by a perpendicular bias, anisotropic magnetoresistance, and spin memory loss in the same formalism.-
dc.languageEnglish-
dc.publisherAMER PHYSICAL SOC-
dc.titleSpin-orbit torques from interfacial spin-orbit coupling for various interfaces-
dc.typeArticle-
dc.identifier.wosid000411768300003-
dc.identifier.scopusid2-s2.0-85029958385-
dc.type.rimsART-
dc.citation.volume96-
dc.citation.issue10-
dc.citation.publicationnamePHYSICAL REVIEW B-
dc.identifier.doi10.1103/PhysRevB.96.104438-
dc.contributor.localauthorLee, Kyung-Jin-
dc.contributor.nonIdAuthorKim, Kyoung-Whan-
dc.contributor.nonIdAuthorSinova, Jairo-
dc.contributor.nonIdAuthorLee, Hyun-Woo-
dc.contributor.nonIdAuthorStiles, M. D.-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTOPOLOGICAL INSULATOR-
dc.subject.keywordPlusDOMAIN-WALLS-
dc.subject.keywordPlusMAGNITUDE-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusSYSTEMS-
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