DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Sung-Yool | ko |
dc.contributor.author | Chung, Hyun Jong | ko |
dc.contributor.author | Kim, Hyun Cheol | ko |
dc.contributor.author | Lee, Han Byeol | ko |
dc.contributor.author | Kim, Hak Seong | ko |
dc.date.accessioned | 2020-10-22T22:55:13Z | - |
dc.date.available | 2020-10-22T22:55:13Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/276902 | - |
dc.description.abstract | Disclosed are a two-dimensional semiconductor in which an energy band gap changes with thickness, a manufacturing method therefor, and a semiconductor device comprising the same. A two-dimensional semiconductor according to an embodiment comprises: a first layer having a first thickness; and a second layer having a second thickness, wherein the first thickness and the second thickness are different from each other, the first layer forms a first junction with a first electrode, and the second layer forms a second junction with a second electrode. | - |
dc.title | Two-dimensional semiconductor, manufacturing method therefor, and semiconductor device comprising same | - |
dc.title.alternative | 2차원 반도체, 이의 제조 방법, 및 이를 포함하는 반도체 소자 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Chung, Hyun Jong | - |
dc.contributor.nonIdAuthor | Kim, Hyun Cheol | - |
dc.contributor.nonIdAuthor | Lee, Han Byeol | - |
dc.contributor.nonIdAuthor | Kim, Hak Seong | - |
dc.contributor.assignee | KAIST, KONKUK UNIVERSITY | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 16314676 | - |
dc.identifier.patentRegistrationNumber | 10777639 | - |
dc.date.application | 2016-07-04 | - |
dc.date.registration | 2020-09-15 | - |
dc.publisher.country | US | - |
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