Two-dimensional semiconductor, manufacturing method therefor, and semiconductor device comprising same2차원 반도체, 이의 제조 방법, 및 이를 포함하는 반도체 소자

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dc.contributor.authorChoi, Sung-Yoolko
dc.contributor.authorChung, Hyun Jongko
dc.contributor.authorKim, Hyun Cheolko
dc.contributor.authorLee, Han Byeolko
dc.contributor.authorKim, Hak Seongko
dc.date.accessioned2020-10-22T22:55:13Z-
dc.date.available2020-10-22T22:55:13Z-
dc.identifier.urihttp://hdl.handle.net/10203/276902-
dc.description.abstractDisclosed are a two-dimensional semiconductor in which an energy band gap changes with thickness, a manufacturing method therefor, and a semiconductor device comprising the same. A two-dimensional semiconductor according to an embodiment comprises: a first layer having a first thickness; and a second layer having a second thickness, wherein the first thickness and the second thickness are different from each other, the first layer forms a first junction with a first electrode, and the second layer forms a second junction with a second electrode.-
dc.titleTwo-dimensional semiconductor, manufacturing method therefor, and semiconductor device comprising same-
dc.title.alternative2차원 반도체, 이의 제조 방법, 및 이를 포함하는 반도체 소자-
dc.typePatent-
dc.type.rimsPAT-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorChung, Hyun Jong-
dc.contributor.nonIdAuthorKim, Hyun Cheol-
dc.contributor.nonIdAuthorLee, Han Byeol-
dc.contributor.nonIdAuthorKim, Hak Seong-
dc.contributor.assigneeKAIST, KONKUK UNIVERSITY-
dc.identifier.iprsType특허-
dc.identifier.patentApplicationNumber16314676-
dc.identifier.patentRegistrationNumber10777639-
dc.date.application2016-07-04-
dc.date.registration2020-09-15-
dc.publisher.countryUS-
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EE-Patent(특허)
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