DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Hee Chul | ko |
dc.contributor.author | Roh, Young Tak | ko |
dc.date.accessioned | 2020-10-14T05:55:40Z | - |
dc.date.available | 2020-10-14T05:55:40Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/276560 | - |
dc.description.abstract | Provided is a radiation-tolerant unit MOSFET to block a leakage current path caused by a total ionizing dose effect and reduce influence of a current pulse generated due to a single event effect. The radiation-tolerant unit MOSFET includes a poly gate layer for designating a gate region and at least one dummy gate region, a source and a drain, and a P+ layer and a P-active layer for specifying a P+ region to the source and the drain, and a dummy drain allowing application of a voltage. An electronic part that may normally operate is provided even a radiation environment where particle radiation and electromagnetic radiation are present. | - |
dc.title | Radiation-tolerant unit MOSFET hardened against single event effect and total ionizing dose effect | - |
dc.title.alternative | 단일 사건 현상과 누적 이온화 현상에 강이한 내방사선 단위 모스펫 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Roh, Young Tak | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 16123930 | - |
dc.identifier.patentRegistrationNumber | 10756028 | - |
dc.date.application | 2018-09-06 | - |
dc.date.registration | 2020-08-25 | - |
dc.publisher.country | US | - |
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