DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Gwang Hyuk | ko |
dc.contributor.author | Park, Cheolmin | ko |
dc.contributor.author | Lee, Khang June | ko |
dc.contributor.author | Jin, Hyeok Jun | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2020-09-18T04:00:31Z | - |
dc.date.available | 2020-09-18T04:00:31Z | - |
dc.date.created | 2020-06-29 | - |
dc.date.created | 2020-06-29 | - |
dc.date.created | 2020-06-29 | - |
dc.date.issued | 2020-08 | - |
dc.identifier.citation | NANO LETTERS, v.20, no.8, pp.5741 - 5748 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/276096 | - |
dc.description.abstract | Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by providing an ultrathin and uniform PN junction with sharp band edges. In this study, a highly sensitive photodetector based on the van der Waals heterostructure of WSe2 and MoS2 was developed. The MoS2 was utilized as the channel for a phototransistor, whereas the WSe2-MoS2 PN junction in the out-of-plane orientation was utilized as a charge transfer layer. The vertical built-in electric field in the PN junction separated the photogenerated carriers, thus leading to a high photoconductive gain of 10(6). The proposed phototransistor exhibited an excellent performance, namely, a high photoresponsivity of 2700 A/W, specific detectivity of 5 x 10(11) Jones, and response time of 17 ms. The proposed scheme in conjunction with the large-area synthesis technology of two-dimensional materials contributes significantly to practical photodetector applications. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Ultrasensitive Phototransistor Based on WSe2-MoS2 van der Waals Heterojunction | - |
dc.type | Article | - |
dc.identifier.wosid | 000562935200022 | - |
dc.identifier.scopusid | 2-s2.0-85089607089 | - |
dc.type.rims | ART | - |
dc.citation.volume | 20 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 5741 | - |
dc.citation.endingpage | 5748 | - |
dc.citation.publicationname | NANO LETTERS | - |
dc.identifier.doi | 10.1021/acs.nanolett.0c01460 | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | photodetector | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | WSe2 | - |
dc.subject.keywordAuthor | van der Waals heterostructure | - |
dc.subject.keywordAuthor | phototransistor | - |
dc.subject.keywordPlus | P-N-JUNCTIONS | - |
dc.subject.keywordPlus | MOS2 PHOTOTRANSISTOR | - |
dc.subject.keywordPlus | BLACK PHOSPHORUS | - |
dc.subject.keywordPlus | PHOTODETECTOR | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | HETEROSTRUCTURE | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | ULTRAVIOLET | - |
dc.subject.keywordPlus | GAIN | - |
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