Superior Carrier Mobility of Ge MOSFETs Depending on Channel Orientation with EOT of 0.57 nm Using Y-ZrO2/GeOx/Ge Stack
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이태인 | ko |
| dc.contributor.author | Nguyen, Manh-Cuong | ko |
| dc.contributor.author | 김민주 | ko |
| dc.contributor.author | 안현준 | ko |
| dc.contributor.author | 신의중 | ko |
| dc.contributor.author | 이승환 | ko |
| dc.contributor.author | 신성원 | ko |
| dc.contributor.author | 황완식 | ko |
| dc.contributor.author | 유현영 | ko |
| dc.contributor.author | 조병진 | ko |
| dc.date.accessioned | 2020-08-25T06:56:00Z | - |
| dc.date.available | 2020-08-25T06:56:00Z | - |
| dc.date.created | 2020-08-13 | - |
| dc.date.issued | 2020-02-13 | - |
| dc.identifier.citation | 제27회 한국반도체학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/275959 | - |
| dc.language | English | - |
| dc.publisher | 연세대학교, 한국반도체산업협회, 한국반도체연구조합 | - |
| dc.title | Superior Carrier Mobility of Ge MOSFETs Depending on Channel Orientation with EOT of 0.57 nm Using Y-ZrO2/GeOx/Ge Stack | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제27회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 강원도 하이원리조트 | - |
| dc.contributor.localauthor | 조병진 | - |
| dc.contributor.nonIdAuthor | Nguyen, Manh-Cuong | - |
| dc.contributor.nonIdAuthor | 이승환 | - |
| dc.contributor.nonIdAuthor | 신성원 | - |
| dc.contributor.nonIdAuthor | 황완식 | - |
| dc.contributor.nonIdAuthor | 유현영 | - |
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