Equations of exposure time and X-ray mask absorber thickness in the LIGA process

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dc.contributor.authorGil, KHko
dc.contributor.authorLee, Seung Seobko
dc.contributor.authorYoum, Yko
dc.date.accessioned2008-01-14T12:03:29Z-
dc.date.available2008-01-14T12:03:29Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2001-03-
dc.identifier.citationMICROSYSTEM TECHNOLOGIES, v.7, no.1, pp.1 - 5-
dc.identifier.issn0946-7076-
dc.identifier.urihttp://hdl.handle.net/10203/2755-
dc.description.abstractThe LIGA X-ray exposure step was modeled into three inequalities from exposure requirements. From these inequalities, equations for the minimum and maximum exposure times required for a good quality microstructure were obtained. An equation for the thickness of an X-ray mask absorber was also obtained from the exposure requirement of threshold dose deposition. A power function of photon energy, approximating the attenuation length of the representative LIGA resist, PMMA, and the mean photon energy of the X-rays incident upon an X-ray mask absorber were applied to the above mentioned equations. Consequently, the trends of the minimum and maximum exposure times with respect to mean photon energy of X-rays and thickness of PMMA were examined and an equation for the maximum exposable thickness of PMMA was obtained. The trends of the necessary thickness of a gold X-ray mask absorber with respect to photon energy of the X-rays and PMMA thickness ratio were also examined. The simplicity of the derived equations has clarified the X-ray exposure phenomenon and the interplay of exposure times, the attenuation coefficient and the thickness of an X-ray mask absorber, the attenuation coefficient and the thickness of a resist, and synchrotron radiation power density.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherSPRINGER-VERLAG-
dc.subjectLITHOGRAPHY-
dc.titleEquations of exposure time and X-ray mask absorber thickness in the LIGA process-
dc.typeArticle-
dc.identifier.wosid000168099800001-
dc.identifier.scopusid2-s2.0-0041905211-
dc.type.rimsART-
dc.citation.volume7-
dc.citation.issue1-
dc.citation.beginningpage1-
dc.citation.endingpage5-
dc.citation.publicationnameMICROSYSTEM TECHNOLOGIES-
dc.identifier.doi10.1007/s005420000062-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Seung Seob-
dc.contributor.nonIdAuthorGil, KH-
dc.contributor.nonIdAuthorYoum, Y-
dc.type.journalArticleArticle-
dc.subject.keywordPlusLITHOGRAPHY-
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