Structure Engineering with ZrO2 Thin Film for Highly Conducting Electrospun In2O3 Nanowire Field Effect Transistor
In O2 atmosphere, 600°C-annealed electrospun ZrO2 nanowire field-effect transistor (NWFET) exhibits conductive behavior with large off-current (loft) and high subthreshold slope (S.S.). Solution-processed Z/O2 thin film is utilized to control and optimize conducting IN203 NWFET and underlying mechanism is studied.
- Publisher
- Society for Information Display
- Issue Date
- 2016-12
- Language
- English
- Citation
23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
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