DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sanghyeon | ko |
dc.contributor.author | Kim, Younghyun | ko |
dc.contributor.author | Ban, Yoojin | ko |
dc.contributor.author | Pantouvaki, Marianna | ko |
dc.contributor.author | Van Campenhout, Joris | ko |
dc.date.accessioned | 2020-05-06T09:20:20Z | - |
dc.date.available | 2020-05-06T09:20:20Z | - |
dc.date.created | 2020-04-27 | - |
dc.date.created | 2020-04-27 | - |
dc.date.created | 2020-04-27 | - |
dc.date.issued | 2020-04 | - |
dc.identifier.citation | IEEE JOURNAL OF QUANTUM ELECTRONICS, v.56, no.2 | - |
dc.identifier.issn | 0018-9197 | - |
dc.identifier.uri | http://hdl.handle.net/10203/274114 | - |
dc.description.abstract | In this paper, we propose a new carrier depletion-type hybrid III-V/Si optical phase shifter using a n-III-V/p-Si hetero-junction, which can be fabricated with direct epitaxial growth of III-V semiconductors on Si. We numerically analyzed the performance of the III-V/Si hybrid optical phase shifter by comparing the performance in reverse bias operation with that of pure Si or III-V p-n optical phase shifters. The hybrid III-V/Si optical phase shifter showed improved modulation efficiency and lower optical loss compared to pure Si and III-V p-n optical phase shifters, owing to the large electron-induced refractive index change of III-V compound semiconductors, while avoiding the large hole-induced optical loss of III-V compound semiconductor. The simulation study suggests the feasibility of a very low voltage-length product (V-pi L) of 0.07 V . cm, a low insertion loss (alpha) of 16 dB/cm, and a very low alpha V-pi L product close to 1 V . dB at 1.31 mu m, which is 10x lower than for Si p-n optical phase shifters. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Simulation Study of a Monolithic III-V/Si V-Groove Carrier Depletion Optical Phase Shifter | - |
dc.type | Article | - |
dc.identifier.wosid | 000525638300001 | - |
dc.identifier.scopusid | 2-s2.0-85081056345 | - |
dc.type.rims | ART | - |
dc.citation.volume | 56 | - |
dc.citation.issue | 2 | - |
dc.citation.publicationname | IEEE JOURNAL OF QUANTUM ELECTRONICS | - |
dc.identifier.doi | 10.1109/JQE.2020.2971764 | - |
dc.contributor.localauthor | Kim, Sanghyeon | - |
dc.contributor.nonIdAuthor | Kim, Younghyun | - |
dc.contributor.nonIdAuthor | Ban, Yoojin | - |
dc.contributor.nonIdAuthor | Pantouvaki, Marianna | - |
dc.contributor.nonIdAuthor | Van Campenhout, Joris | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Optical phase shifter | - |
dc.subject.keywordAuthor | optical modulation | - |
dc.subject.keywordAuthor | heterogeneous integration | - |
dc.subject.keywordAuthor | III-V on Si | - |
dc.subject.keywordAuthor | hybrid integration | - |
dc.subject.keywordPlus | SILICON MACH-ZEHNDER | - |
dc.subject.keywordPlus | REFRACTIVE-INDEX | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | LASERS | - |
dc.subject.keywordPlus | INP | - |
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