DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, Myung Soo | ko |
dc.contributor.author | Bae, Hag Youl | ko |
dc.contributor.author | Jeon, Chang Hoon | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Lee, Byung Hyun | ko |
dc.date.accessioned | 2020-03-23T01:20:54Z | - |
dc.date.available | 2020-03-23T01:20:54Z | - |
dc.date.created | 2020-01-29 | - |
dc.date.created | 2020-01-29 | - |
dc.date.issued | 2017-10-16 | - |
dc.identifier.citation | 2017 IEEE S3S Conference | - |
dc.identifier.uri | http://hdl.handle.net/10203/273376 | - |
dc.description.abstract | An accurate method of extracting intrinsic effective mobility is proposed which considers the parasitic component and floating-body effects. The technique was verified with fabricated ultra-thin body (UTB) strained silicon-on-insulator (sSOI) MOSFETs. The accurate mobility values extracted using the newly proposed technique, were then comparatively analyzed. This novel method corrects the underestimation of mobility produced by the parasitic component and the overestimated mobility resulting from the floating-body effects. | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.title | Advanced Characterization Technique for the Extraction of Intrinsic Effective Mobility in Ultra-Thin-Body Strained SOI MOSFETs | - |
dc.type | Conference | - |
dc.identifier.wosid | 000463041500068 | - |
dc.identifier.scopusid | 2-s2.0-85047747532 | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | 2017 IEEE S3S Conference | - |
dc.identifier.conferencecountry | US | - |
dc.identifier.conferencelocation | San FranciscoBurlingame, CA | - |
dc.identifier.doi | 10.1109/S3S.2017.8309238 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Bae, Hag Youl | - |
dc.contributor.nonIdAuthor | Jeon, Chang Hoon | - |
dc.contributor.nonIdAuthor | Lee, Byung Hyun | - |
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