DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mun, Seon Hong | ko |
dc.contributor.author | Chalapathy, R.B.V. | ko |
dc.contributor.author | Ahn, Jin Hyung | ko |
dc.contributor.author | Park, Jung Woo | ko |
dc.contributor.author | Kim, Ki Hwan | ko |
dc.contributor.author | Yun, Jae Ho | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2020-01-17T01:20:22Z | - |
dc.date.available | 2020-01-17T01:20:22Z | - |
dc.date.created | 2020-01-15 | - |
dc.date.created | 2020-01-15 | - |
dc.date.created | 2020-01-15 | - |
dc.date.created | 2020-01-15 | - |
dc.date.issued | 2019-03 | - |
dc.identifier.citation | Current Photovoltaic Research, v.7, no.1, pp.1 - 8 | - |
dc.identifier.issn | 2288-3274 | - |
dc.identifier.uri | http://hdl.handle.net/10203/271402 | - |
dc.description.abstract | The Cu(In,Ga)Se2 (CIGS) thin film obtained by two-step process (metal deposition and Se annealing) has a rough surface morphology and many voids at the CIGS/Mo interface. To solve the problem a precursor that contains Se was employer by depositing a (In,Se)/(Cu,Ga) stacked layer. We devised a two-step annealing (vacuum pre-annealing and Se annealing) for the precursor because direct annealing of the precursor in Se environment resulted in the small grains with unwanted demarcation between stacked layers. After vacuum pre-annealing up to 500°C the CIGS film consisted of CIGS phase and secondary phases including In4Se3, InSe, and Cu9(In,Ga)4. The secondary phases were completely converted to CIGS phase by a subsequent Se annealing. A void-free CIGS/Mo interface was obtained by the two-step annealing process. Especially, the CIGS film prepared by vacuum annealing 450°C and subsequent Se annealing 550°C showed a densely-packed grains with smooth surface, well-aligned bamboo grains on the top of the film, little voids in the film, and also little voids at the CIGS/Mo interface. The smooth surface enhanced the cell performance due to the increase of shunt resistance. | - |
dc.language | English | - |
dc.publisher | 한국태양광발전학회 | - |
dc.title | Preparation of a Dense Cu(In,Ga)Se2 Film From (In,Se)/(Cu,Ga) Stacked Precursor for CIGS Solar Cells | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 1 | - |
dc.citation.endingpage | 8 | - |
dc.citation.publicationname | Current Photovoltaic Research | - |
dc.identifier.doi | 10.21218/CPR.2019.7.1.001 | - |
dc.identifier.kciid | ART002453532 | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Chalapathy, R.B.V. | - |
dc.contributor.nonIdAuthor | Ahn, Jin Hyung | - |
dc.contributor.nonIdAuthor | Park, Jung Woo | - |
dc.contributor.nonIdAuthor | Kim, Ki Hwan | - |
dc.contributor.nonIdAuthor | Yun, Jae Ho | - |
dc.description.isOpenAccess | Y | - |
dc.subject.keywordAuthor | CIGS solar cell | - |
dc.subject.keywordAuthor | (In | - |
dc.subject.keywordAuthor | Se)/(Cu | - |
dc.subject.keywordAuthor | Ga) precursor | - |
dc.subject.keywordAuthor | Vacuum pre-annealing and selenization | - |
dc.subject.keywordAuthor | Dense CIGS film | - |
dc.subject.keywordAuthor | Smooth surface | - |
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