THE DEPOSITION CHARACTERISTICS AND THE STRUCTURAL NATURE OF THE DEPOSIT IN THE CHEMICAL VAPOR-DEPOSITION OF BORON

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Boron was deposited onto graphite by a chemical vapour deposition (CVD) technique using gaseous mixtures of BCl3 and hydrogen. The CVD of boron is a thermally activated process with an apparent activation energy of 18.8±0.7 kcal mol-1 at low temperatures and high gas flow rates. At high deposition temperatures and low gas flow rates the deposition rate depends on the gas phase mass transfer. Boron is deposited as an amorphous material below 1250 K, and mainly as the β rhombohedral modification above 1250 K. However, a small amount of β tetragonal boron is deposited together with the β rhombohedral boron. The β rhombohedral boron has a strong (104) preferred orientation at 1500 K. However, the preference for the (104) orientation is reduced as the BCl3 fraction or the gas flow rate increases.
Publisher
ELSEVIER SCIENCE SA LAUSANNE
Issue Date
1985-09
Language
English
Article Type
Article
Citation

THIN SOLID FILMS, v.131, no.3-4, pp.205 - 214

ISSN
0040-6090
DOI
10.1016/0040-6090(85)90141-5
URI
http://hdl.handle.net/10203/271024
Appears in Collection
EE-Journal Papers(저널논문)
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