Improvement of catastrophic optical damage (COD) level for high-power 0.98-mu m GaInAs-GaInP laser diodes using impurity induced layer disordering
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, JK | ko |
| dc.contributor.author | Park, KH | ko |
| dc.contributor.author | Jang, DH | ko |
| dc.contributor.author | Cho, HS | ko |
| dc.contributor.author | Park, Chul Soon | ko |
| dc.contributor.author | Pyun, KE | ko |
| dc.contributor.author | Jeong, J | ko |
| dc.date.accessioned | 2020-01-09T02:20:06Z | - |
| dc.date.available | 2020-01-09T02:20:06Z | - |
| dc.date.created | 2020-01-06 | - |
| dc.date.issued | 1998-09 | - |
| dc.identifier.citation | IEEE PHOTONICS TECHNOLOGY LETTERS, v.10, no.9, pp.1226 - 1228 | - |
| dc.identifier.issn | 1041-1135 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/270989 | - |
| dc.description.abstract | We investigate improvement of catastrophic optical damage (COD) level for Al-free 0.98-mu m ridge waveguide laser diodes (LD's) using the impurity induced layer disordering (IILD) process applied near the facets. The IILD is used for the purpose of forming transparent windows near both facets of the LD's utilizing its ability to increase bandgap energy of the GaInAs-GaInAsP strained quantum-well (QW) active layer. Improvement of the COD level by at least 1.65 times compared to the conventional LD's is obtained for the LD's with Si+ implantation followed by annealing at 900 degrees C for 10 min. | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Improvement of catastrophic optical damage (COD) level for high-power 0.98-mu m GaInAs-GaInP laser diodes using impurity induced layer disordering | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000075338100010 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 10 | - |
| dc.citation.issue | 9 | - |
| dc.citation.beginningpage | 1226 | - |
| dc.citation.endingpage | 1228 | - |
| dc.citation.publicationname | IEEE PHOTONICS TECHNOLOGY LETTERS | - |
| dc.identifier.doi | 10.1109/68.705598 | - |
| dc.contributor.localauthor | Park, Chul Soon | - |
| dc.contributor.nonIdAuthor | Lee, JK | - |
| dc.contributor.nonIdAuthor | Park, KH | - |
| dc.contributor.nonIdAuthor | Jang, DH | - |
| dc.contributor.nonIdAuthor | Cho, HS | - |
| dc.contributor.nonIdAuthor | Pyun, KE | - |
| dc.contributor.nonIdAuthor | Jeong, J | - |
| dc.description.isOpenAccess | N | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | catastrophic optical damage (COD) | - |
| dc.subject.keywordAuthor | impurity induced layer disordering (IILD) | - |
| dc.subject.keywordAuthor | optical pumping | - |
| dc.subject.keywordAuthor | semiconductor lasers | - |
| dc.subject.keywordPlus | FACETS | - |
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 16 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.