DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Young Bong | ko |
dc.contributor.author | Kim, Woo Young | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.date.accessioned | 2019-12-31T01:20:44Z | - |
dc.date.available | 2019-12-31T01:20:44Z | - |
dc.date.created | 2019-12-30 | - |
dc.date.created | 2019-12-30 | - |
dc.date.created | 2019-12-30 | - |
dc.date.issued | 2019-12 | - |
dc.identifier.citation | JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, v.28, no.6, pp.1032 - 1038 | - |
dc.identifier.issn | 1057-7157 | - |
dc.identifier.uri | http://hdl.handle.net/10203/270807 | - |
dc.description.abstract | Infrared scene projector (IRSP) is a tool for evaluating the performance of infrared (IR) sensors by generating and projecting virtual IR images. Developing IRSPs with a high frame rate is necessary to evaluate high-speed IR sensors. To develop IRSPs with high frame rates, porous anodic aluminum oxide (AAO) with high thermal conductivity is proposed as a constituent material of IR emitters, which emit infrared rays in IRSPs. Through structure design and fabrication, an AAO-based IR emitter having a suspended structure with a gap of $1\mu \text{m}$ from the substrate was fabricated. The operating speed was obtained by confirming the change in the temperature, which was calculated by measuring the change in resistance after applying the step-function voltage. The operating speed of the AAO-based IR emitter was found to increase with decrease in the leg length of the device. The frame rate of the device with a $5\mu \text{m}$ leg length was found to be 155.3 Hz, twice as fast as the conventional silicon nitride (Si3N4)-based emitters with the same leg length and pitch. Consequently, it is possible to develop the high-speed IRSPs with the application of AAO for emitter. [2019-0191] | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Anodic Aluminum Oxide-Based IR Emitter for High-Speed Infrared Scene Projector | - |
dc.type | Article | - |
dc.identifier.wosid | 000501826900011 | - |
dc.identifier.scopusid | 2-s2.0-85077315421 | - |
dc.type.rims | ART | - |
dc.citation.volume | 28 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 1032 | - |
dc.citation.endingpage | 1038 | - |
dc.citation.publicationname | JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | - |
dc.identifier.doi | 10.1109/JMEMS.2019.2943999 | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Kim, Woo Young | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Anodic aluminum oxide | - |
dc.subject.keywordAuthor | IR emitter | - |
dc.subject.keywordAuthor | infrared scene projector | - |
dc.subject.keywordAuthor | microelectromechanical device | - |
dc.subject.keywordPlus | THERMAL-CONDUCTIVITY | - |
dc.subject.keywordPlus | ANODIZATION | - |
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