DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Min Ju | ko |
dc.contributor.author | Pak, Kwanyong | ko |
dc.contributor.author | Choi, Junhwan | ko |
dc.contributor.author | Lee, Tae In | ko |
dc.contributor.author | Hwang, Wan Sik | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.contributor.author | Cho, Byung-Jin | ko |
dc.date.accessioned | 2019-12-19T00:20:12Z | - |
dc.date.available | 2019-12-19T00:20:12Z | - |
dc.date.created | 2019-11-21 | - |
dc.date.created | 2019-11-21 | - |
dc.date.created | 2019-11-21 | - |
dc.date.created | 2019-11-21 | - |
dc.date.created | 2019-11-21 | - |
dc.date.issued | 2019-11 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.11, no.47, pp.44513 - 44520 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/269891 | - |
dc.description.abstract | A one-step synthesis method is introduced and used to form an ultrathin, homogeneous organic–inorganic hybrid dielectric film with a high dielectric constant (high-k), based on initiated chemical vapor deposition. The hybrid dielectric is synthesized from tetrakis-dimethyl-amino-zirconium and 2-hydroxyethyl methacrylate, which are a high-k inorganic material and a soft organic material, respectively. A detailed material analysis on the synthesized ZrOx-organic hybrid (Zr-hybrid) is performed. The Zr-hybrid dielectric has a high dielectric constant of nine, leading to a film equivalent oxide thickness (EOT) as low as 3.2 nm, which is the lowest EOT obtained from a flexible dielectric layer to date. The leakage current density (J) is no larger than 6 × 10–7 A/cm2 at 2 MV/cm, and the breakdown field (Ebreak) was ∼3.3 MV/cm. The J of the Zr-hybrid dielectric remains almost constant even under the 2.5% strain condition, while that of the ZrO2 dielectric breaks down electrically at a tensile strain of less than 1.0%. The Zr-hybrid dielectric shows an energy band gap in the range of 5.2–5.4 eV and exhibits a sufficient valence band offset of around 3.0 eV with a pentacene organic semiconductor. The gate stack of the Zr-hybrid dielectric/pentacene semiconductor shows decent metal–oxide–semiconductor field-effect transistor performance even under a tensile strain of 1.67%, indicating that the Zr-hybrid is a promising gate dielectric for advanced flexible electronic applications. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Ultrathin ZrOx-Organic Hybrid Dielectric (EOT 3.2 nm) via Initiated Chemical Vapor Deposition for High-Performance Flexible Electronics | - |
dc.type | Article | - |
dc.identifier.wosid | 000500415700075 | - |
dc.identifier.scopusid | 2-s2.0-85075544993 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 47 | - |
dc.citation.beginningpage | 44513 | - |
dc.citation.endingpage | 44520 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.9b15363 | - |
dc.contributor.localauthor | Im, Sung Gap | - |
dc.contributor.localauthor | Cho, Byung-Jin | - |
dc.contributor.nonIdAuthor | Lee, Tae In | - |
dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Zr-hybrid | - |
dc.subject.keywordAuthor | high-k dielectric | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.subject.keywordAuthor | initiated chemical vapor deposition | - |
dc.subject.keywordAuthor | organic thin-film transistor | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | HAFNIUM | - |
dc.subject.keywordPlus | ALD | - |
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