DC Field | Value | Language |
---|---|---|
dc.contributor.author | Koh, Sungjun | ko |
dc.contributor.author | Lee, Hyeonjun | ko |
dc.contributor.author | Lee, Taemin | ko |
dc.contributor.author | Park, Kyoungwon | ko |
dc.contributor.author | Kim, Woo-Jae | ko |
dc.contributor.author | Lee, Doh Chang | ko |
dc.date.accessioned | 2019-12-17T02:20:23Z | - |
dc.date.available | 2019-12-17T02:20:23Z | - |
dc.date.created | 2019-12-04 | - |
dc.date.created | 2019-12-04 | - |
dc.date.issued | 2019-10 | - |
dc.identifier.citation | JOURNAL OF CHEMICAL PHYSICS, v.151, no.14 | - |
dc.identifier.issn | 0021-9606 | - |
dc.identifier.uri | http://hdl.handle.net/10203/269767 | - |
dc.description.abstract | Colloidal InP quantum dots (QDs) have attracted a surge of interest as environmentally friendly light-emitters in downconversion liquid crystal displays and light-emitting diodes (LEDs). A ZnS shell on InP-based core QDs has helped achieve high photoluminescence (PL) quantum yield (QY) and stability. Yet, due to the difficulty in the growth of a thick ZnS shell without crystalline defects, InP-based core/shell QDs show inferior stability against QY drop compared to Cd chalcogenide precedents, e.g., CdSe/CdS core/thick-shell QDs. In this work, we demonstrate the synthesis of InP-based core/shell QDs coated with an Al-doped ZnS outer shell. QDs with an Al-doped shell exhibit remarkable improvement in thermal and air stability even when the shell thickness is below 2 nm, while the absorption and PL spectra, size, and crystal structure are nearly the same as the case of QDs with a pristine ZnS shell. X-ray photoelectron spectroscopy reveals that Al3+ in Al-doped QDs forms an Al-oxide layer at elevated temperature under ambient atmosphere. The as-formed Al-oxide layer blocks the access of external oxidative species penetrating into QDs and prevents QDs from oxidative degradation. We also trace the chemical pathway of the incorporation of Al3+ into ZnS lattice during the shell growth. Furthermore, we fabricate QD-LEDs using Al-doped and undoped QDs and compare the optoelectronic characteristics and stability. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Enhanced thermal stability of InP quantum dots coated with Al-doped ZnS shell | - |
dc.type | Article | - |
dc.identifier.wosid | 000500356200040 | - |
dc.identifier.scopusid | 2-s2.0-85073217212 | - |
dc.type.rims | ART | - |
dc.citation.volume | 151 | - |
dc.citation.issue | 14 | - |
dc.citation.publicationname | JOURNAL OF CHEMICAL PHYSICS | - |
dc.identifier.doi | 10.1063/1.5121619 | - |
dc.contributor.localauthor | Lee, Doh Chang | - |
dc.contributor.nonIdAuthor | Park, Kyoungwon | - |
dc.contributor.nonIdAuthor | Kim, Woo-Jae | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | LIGHT | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | PHOTOSTABILITY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
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