DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Tae Yoon | ko |
dc.contributor.author | Lee, Seung Hwan | ko |
dc.contributor.author | Son, Jun Woo | ko |
dc.contributor.author | Lee, Sang Jae | ko |
dc.contributor.author | Bong, Jae Hoon | ko |
dc.contributor.author | Shin, Eui Joong | ko |
dc.contributor.author | Kim, Sung Ho | ko |
dc.contributor.author | Hwang, Wan Sik | ko |
dc.contributor.author | Moon, Jung Min | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Cho, Byung-Jin | ko |
dc.date.accessioned | 2019-12-13T01:20:50Z | - |
dc.date.available | 2019-12-13T01:20:50Z | - |
dc.date.created | 2019-11-21 | - |
dc.date.created | 2019-11-21 | - |
dc.date.created | 2019-11-21 | - |
dc.date.created | 2019-11-21 | - |
dc.date.issued | 2020-02 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, v.164, pp.107713 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/268747 | - |
dc.description.abstract | A charge-trap flash (CTF) memory stack of chemical vapor deposition (CVD) tungsten (W) was systematically compared with a physical vapor deposited (PVD) W memory stack. The residual F in the CVD W was diffused into Al2O3, Si3N4, SiO2, and the interface at SiO2/poly-Si after the subsequent annealing process at 900 °C for 1 s. The diffused F increased the SiO2 thickness and altered the charge-trap density in the Al2O3, Si3N4, SiO2, and SiO2/poly-Si interface, and this eventually affected memory performance and reliability. The memory window and program/erase retention properties degraded while the charge-transport and endurance characteristics improved with the CVD W memory as compared to the PVD W memory. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Analysis of Fluorine Effects on Charge-Trap Flash Memory of W/TiN/Al2O3/Si3N4/SiO2/Poly-Si Gate Stack | - |
dc.type | Article | - |
dc.identifier.wosid | 000504462700004 | - |
dc.identifier.scopusid | 2-s2.0-85075628470 | - |
dc.type.rims | ART | - |
dc.citation.volume | 164 | - |
dc.citation.beginningpage | 107713 | - |
dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
dc.identifier.doi | 10.1016/j.sse.2019.107713 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.localauthor | Cho, Byung-Jin | - |
dc.contributor.nonIdAuthor | Lee, Tae Yoon | - |
dc.contributor.nonIdAuthor | Lee, Seung Hwan | - |
dc.contributor.nonIdAuthor | Son, Jun Woo | - |
dc.contributor.nonIdAuthor | Lee, Sang Jae | - |
dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Chemical vapor deposition (CVD) | - |
dc.subject.keywordAuthor | Tungsten (W) | - |
dc.subject.keywordAuthor | Fluorine (F) | - |
dc.subject.keywordAuthor | Charge-trap flash (CTF) | - |
dc.subject.keywordAuthor | Memory device | - |
dc.subject.keywordPlus | OXIDE | - |
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