Passivation of Deep-Level Defects by Cesium Fluoride Post-Deposition Treatment for Improved Device Performance of Cu(In,Ga)Se-2 Solar Cells

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dc.contributor.authorLee, Hojinko
dc.contributor.authorJang, Yuseongko
dc.contributor.authorNam, Sung-Wookko
dc.contributor.authorJung, Chanwonko
dc.contributor.authorChoi, Pyuck-Pako
dc.contributor.authorGwak, Jihyeko
dc.contributor.authorYun, Jae Hoko
dc.contributor.authorKim, Kihwanko
dc.contributor.authorShin, Byunghako
dc.date.accessioned2019-10-22T09:20:26Z-
dc.date.available2019-10-22T09:20:26Z-
dc.date.created2019-10-22-
dc.date.created2019-10-22-
dc.date.issued2019-10-
dc.identifier.citationACS APPLIED MATERIALS & INTERFACES, v.11, no.39, pp.35653 - 35660-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10203/268036-
dc.description.abstractHeavy-alkali post-deposition treatments (PDTs) utilizing Cs or Rb has become an indispensable step in producing high-performance Cu(In,Ga)Se-2 (CIGS) solar cells. However, full understanding of the mechanism behind the improvements of device performance by heavy-alkali treatments, particularly in terms of potential modification of defect characteristics, has not been reached yet. Here, we present an extensive study on the effects of CsF-PDT on material properties of CIGS absorbers and the performance of the final solar devices. Incorporation of an optimized concentration of Cs into CIGS resulted in a significant improvement of the device efficiency from 15.9 to 18.4% mainly due to an increase in the open-circuit voltage by 50 mV. Strong segregation of Cs at the front and rear interfaces as well as along grain boundaries of CIGS was observed via high-resolution chemical analysis such as atomic probe tomography. The study of defect chemistry using photoluminescence and capacitance-based measurements revealed that both deep-level donor-like defects such as V-Se and In-Cu and deep-level acceptor-like defects such as V-In or Cu-In are passivated by CsF-PDT, which contribute to an increased hole concentration. Additionally, it was found that CsF-PDT induces a slight change in the energetics of V-Cu, the most dominant point defect that is responsible for the p-type conductivity of CIGS.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titlePassivation of Deep-Level Defects by Cesium Fluoride Post-Deposition Treatment for Improved Device Performance of Cu(In,Ga)Se-2 Solar Cells-
dc.typeArticle-
dc.identifier.wosid000489001900015-
dc.identifier.scopusid2-s2.0-85072848748-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue39-
dc.citation.beginningpage35653-
dc.citation.endingpage35660-
dc.citation.publicationnameACS APPLIED MATERIALS & INTERFACES-
dc.identifier.doi10.1021/acsami.9b08316-
dc.contributor.localauthorChoi, Pyuck-Pa-
dc.contributor.localauthorShin, Byungha-
dc.contributor.nonIdAuthorLee, Hojin-
dc.contributor.nonIdAuthorJang, Yuseong-
dc.contributor.nonIdAuthorNam, Sung-Wook-
dc.contributor.nonIdAuthorGwak, Jihye-
dc.contributor.nonIdAuthorYun, Jae Ho-
dc.contributor.nonIdAuthorKim, Kihwan-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCu(In,Ga)Se-2 solar cells-
dc.subject.keywordAuthorinorganic thin-film material-
dc.subject.keywordAuthorpost-deposition treatment-
dc.subject.keywordAuthorheavy-alkali incorporation-
dc.subject.keywordAuthordefect passivation-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusATOM-PROBE-
dc.subject.keywordPlusPOLYCRYSTALLINE CU(IN,GA)SE-2-
dc.subject.keywordPlusGRAIN-BOUNDARIES-
dc.subject.keywordPlusEFFICIENCY-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusSODIUM-
dc.subject.keywordPlusDISTRIBUTIONS-
dc.subject.keywordPlusCUINSE2-
dc.subject.keywordPlusIMPACT-
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