DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Tae In | ko |
dc.contributor.author | Manh-Cuong Nguyen | ko |
dc.contributor.author | Ahn, Hyunjun | ko |
dc.contributor.author | 김민주 | ko |
dc.contributor.author | Shin, Eui Joong | ko |
dc.contributor.author | Hwang, Wan Sik | ko |
dc.contributor.author | Yu, Hyun-Young | ko |
dc.contributor.author | Choi, Rino | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2019-09-17T06:20:48Z | - |
dc.date.available | 2019-09-17T06:20:48Z | - |
dc.date.created | 2019-09-17 | - |
dc.date.created | 2019-09-17 | - |
dc.date.created | 2019-09-17 | - |
dc.date.issued | 2019-09 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1350 - 1353 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/267507 | - |
dc.description.abstract | We report on the impact of H-2 high pressure annealing (H-2-HPA) on a Y-doped ZrO2 (Y-ZrO2)/GeOx/Ge gate stack. In this paper, compared to conventional forming gas annealing (FGA), the H-2-HPA increased the k-value of the Y-doped ZrO2 gate dielectric to as high as 47.8 by enhancing the crystallization of the Y-ZrO2. This process can achieve an aggressively scaled equivalent oxide thickness (EOT) of 0.57 nm with an extremely low gate leakage current (J(g)) of 4.5 x 10(-6)A/cm(2). In addition, the H-2-HPA effectively passivated the dangling bonds and reduced the interface trap density (D-it) to as low as 3.4 x 10(11)eV(-1)cm(-2). The Ge pMOSFETs of the Y-ZrO2 with H-2-HPA led to a similar to 70% improvement in the effective hole mobility compared to the counterpart device with the conventional FGA. The device with H-2-HPA also showed an improved subthreshold swing (SS) value of 93 mV/dec compared to that with the FGA (135 mV/dec). | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | H-2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs | - |
dc.type | Article | - |
dc.identifier.wosid | 000483014600002 | - |
dc.identifier.scopusid | 2-s2.0-85082884629 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 1350 | - |
dc.citation.endingpage | 1353 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2019.2928026 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Manh-Cuong Nguyen | - |
dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
dc.contributor.nonIdAuthor | Yu, Hyun-Young | - |
dc.contributor.nonIdAuthor | Choi, Rino | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Germanium | - |
dc.subject.keywordAuthor | equivalent oxide thickness (EOT) | - |
dc.subject.keywordAuthor | gate leakage current | - |
dc.subject.keywordAuthor | interface properties | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | mobility | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | EXTRACTION | - |
dc.subject.keywordPlus | IMPACT | - |
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