Preliminary study on the effect of cosmic-ray induced neutrons on DRAM at aircraft’s altitude using MCNP simulationMCNP 전산 모사를 이용한 항공기 운항 고도에서 우주선으로 인한 중성자가 DRAM에 미치는 영향에 관한 기초 연구

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 549
  • Download : 0
The Galactic Cosmic Rays (GCRs) interacts with the atmosphere to produce the secondary particles (e.g., neutrons, alpha particles, heavier nuclei, muons, and pions). These secondary particles can interact with semiconductor devices that frequently transported via an aircraft and may affect their performance. Considering the stopping power of all the particles, the impact of neutrons on these devices is significant as compared to others. This effect can minimized by enclosing the devices inside a radiation shielding material. In this thesis, the entire scenario is simulated using Monte-Carlo N-Particle (MCNP6) transport code. The geometry is modelled in such a way that cosmic rays source is simulated at a height of 65 km and a shielding box is placed inside the aircraft. Various kinds of shielding materials i.e., normal polyethylene, borated lead-polyethylene, 30% borated polyethylene, and Bismuth loaded polyethylene have been considered to reduce the neutron fluence inside the shielded box where semi-conductor devices are supposed to be placed. The results show that the normal polyethylene is the most effective shielding material against neutrons. As it has the finest neutron moderation properties considering hydrogen to carbon ratio being around 66.67% to 33.33% by atom fraction. Furthermore, these neutrons after passing through the packaging box may collide with the DRAM devices and deposit energy on DRAM’s material i.e. silicon. Due to Energy deposition by Heavy charged Particle and emission of e-hole pairs, DRAM devices show up failure. These failures are of two kinds, soft errors and hard errors, depending on the location of the strike on the DRAM devices. Quantifying the e-hole pairs in the silicon substrate by the neutron spectrum inside the packaging box can lead to account for failure in DRAM devices.
Advisors
Cho, Sung Ohresearcher조성오researcher
Description
한국과학기술원 :원자력및양자공학과,
Publisher
한국과학기술원
Issue Date
2019
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 원자력및양자공학과, 2019.2,[v, 45 p. :]

Keywords

Neutron spectrum▼amonte carlo▼asemiconductors▼aprimary and secondary cosmic rays▼aDRAM failure; 중성자 스펙트럼▼a몬테카를로▼a반도체▼a1 차 및 2 차 우주선▼aDRAM 고장

URI
http://hdl.handle.net/10203/266593
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=843356&flag=dissertation
Appears in Collection
NE-Theses_Master(석사논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0