Characterization of Ni stressor layer based device exfoliation process for flexible memory fabrication

Abstract

As controlled spalling technology using residual stress of electrodeposited nickel can be applied to CMOS devices, it attracts a lot of attention as a device flexibilization technology for commercialization of wearable electronic devices. Previous technology based on Ni stressor layer had difficulty to exfoliate the device within 5 $\mu$m of thickness. In this study, exfoliation of single crystalline silicon substrate thinner than 1 $\mu$m is succeeded increment of residual stress and controlling the characteristics of electrodeposited Ni film. Moreover, the process can be actually applicable by demonstrating flexible resistive switching memory.