DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Yoon, Jun Bo | - |
dc.contributor.advisor | 윤준보 | - |
dc.contributor.author | Seo, Min-Ho | - |
dc.date.accessioned | 2019-08-25T02:46:03Z | - |
dc.date.available | 2019-08-25T02:46:03Z | - |
dc.date.issued | 2018 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=734395&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/265244 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 전기및전자공학부, 2018.2,[iii, 81p :] | - |
dc.description.abstract | The development of high performance flexible electronic devices has attracted con-siderable attention owing to the proliferation of flexible/wearable future electronic appli-cations. Nanowires (NWs) are a promising candidate for high performance flexible devices because of their extraordinary physical/chemical properties based on a unique nanoscale 1D form-factor. To achieve high device performance and diverse applications, it is im-portant to control the aspect-ratio, crystallinity, composition, and defect density of NWs with wide range of material-selection on flexible substrates. In addition, recent applica-tions of NWs, including high performance nano-devices require a reliable method to fabri-cate fully-aligned and dense NWs over a large area. However, it is still challenging to fab-ricate geometry-controlled and high quality NWs, regardless of materials, on a large area flexible substrate, limiting NWs for the wide range of applications. Here, we develop a novel transfer method to fabricate fully-aligned, dense, ultralong NWs, regardless of ma-terials, on a flexible substrate. To achieve our purpose, we newly develop a top-down ap-proach fabrication based nano-transfer methods based on high-temperature thermal treatment and novel sacrificial layer techniques. The thermal temperature annealing is classified with 3 ranges, which can be used for material property modification of wide range of materials, such as metals, semiconductors, and ceramics | - |
dc.description.abstract | i) low-temperature cov-ering from room temperature to 200 °C, ii) mid-temperature range covering about 400 °C, and iii) high-temperature range for about 700 °C. Using these method, we first produce an ultralong, perfectly aligned metal / semiconductor nanowire array that is heat treated at >700 °C on a flexible polyethylene terephthalate substrate. Based on the devel-oped methods, we further developed various advanced nano-electronic devices, such as flexible heater and wearable nanogenerator, with high simplicity and manufacturing reliability. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Nanowire▼aNano-Transfer▼aAnnealing▼aFlexible Sensor▼aWearable Electronics | - |
dc.subject | 나노와이어▼a나노-전사▼a열처리▼a유연 센서▼a착용형 전자소자 | - |
dc.title | Development of wafer-scale nanowire transfer method with various temperature thermal treatment for high-performance flexible devices | - |
dc.title.alternative | 고성능 유연 나노 전자 소자의 신뢰적 제작을 위한 넓은 범위의 열처리 가능한 웨이퍼 스케일의 나노와이어 전사 공정 개발 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :전기및전자공학부, | - |
dc.contributor.alternativeauthor | 서민호 | - |
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