Surface chemistry manipulation of 2-dimensional molybdenum disulfide for high-performance nanoelectronics2차원 $MoS_2$ 물질의 표면개질을 통한 특성제어 및 소자특성 향상

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2D transition metal dichalcogenides (TMDs) have attracted a great attention due to its unique electrical, optical, and chemical properties in recent years. Although graphene shows a high mobility up to $10^6 cm^2/Vs$, its absence of a bandgap seriously limits its application for an active channel material in optoelectronic devices such as photodetecting and switching device applications. Alternatively, Molybdenum disulfide ($MoS_2$), one of the most widely studied semiconducting TMDs, shows a thickness-dependent energy bandgap and band structure: indirect bandgap of 1.2eV in a bulk $MoS_2$ and direct bandgap of 1.8eV in a monolayer form. Furthermore, its atomic-scale thickness, lack of dangling bonds and flexibility could enable a wide range of next-generation nanoelectronic devices. Despite these promising properties of $MoS_2$, the lack of understanding and control over $MoS_2$ surface functionalization shows limitations on its properties and applications, because surface functionalization can offer useful platform to modify the electronic, optical and catalytic properties and fully harness the capabilities of $MoS_2$. Thus, in this thesis, we focus on the surface chemistry of $MoS_2$ to broaden the applicability for scalable processing and device integration.
Advisors
Jung, Yeon Sikresearcher정연식researcher
Description
한국과학기술원 :신소재공학과,
Publisher
한국과학기술원
Issue Date
2017
Identifier
325007
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 신소재공학과, 2017.2,[viii, 121 p. :]

Keywords

2D layered materials▼aMolybdenum disulfide ($MoS_2$)▼asurface chemistry▼afield effect transistor▼adoping▼achemical property▼adispersion; 이황화몰리브덴▼a표면개질▼a장효과 트랜지스터▼a도핑▼a화학적 특성▼a분산

URI
http://hdl.handle.net/10203/265028
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=866966&flag=dissertation
Appears in Collection
MS-Theses_Ph.D.(박사논문)
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