DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Yongsoo | ko |
dc.contributor.author | Shin, Mincheol | ko |
dc.date.accessioned | 2019-08-05T07:20:04Z | - |
dc.date.available | 2019-08-05T07:20:04Z | - |
dc.date.created | 2019-08-05 | - |
dc.date.created | 2019-08-05 | - |
dc.date.created | 2019-08-05 | - |
dc.date.created | 2019-08-05 | - |
dc.date.issued | 2019-08 | - |
dc.identifier.citation | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.7, no.1, pp.668 - 676 | - |
dc.identifier.issn | 2168-6734 | - |
dc.identifier.uri | http://hdl.handle.net/10203/264004 | - |
dc.description.abstract | In this paper, atomistic-level quantum mechanical simulations are performed for nanoscale field-effect transistors (FETs) with lateral or vertical heterojunction, within the non-equilibrium Green's function formalism. For efficient simulation of such heterostructure FETs, a novel approach is developed where the Green's functions are calculated by complementarily using the two algorithms of the recursive Green's function and the R-matrix. The R-matrix algorithm is extended to seamlessly combine the two methods on the open system and an algorithm for the electron correlation function based on the extended R-matrix algorithm is also developed. The proposed method significantly reduces simulation time, making rigorous atomistic simulations of heterojunction FETs possible. As an application, device simulations are performed for the germanane/InSe vertical tunneling FET (VTEET) modeled through the first-principles density functional theory. Our simulation results reveal that the germanane/InSe VTEET is a promising candidate for future low power applications. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Efficient Atomistic Simulation of Heterostucture Field-Effect Transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000476761200001 | - |
dc.identifier.scopusid | 2-s2.0-85069759262 | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 668 | - |
dc.citation.endingpage | 676 | - |
dc.citation.publicationname | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | - |
dc.identifier.doi | 10.1109/JEDS.2019.2925402 | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Heterostructure field-effect transistors | - |
dc.subject.keywordAuthor | quantum transport | - |
dc.subject.keywordAuthor | non-equilibrium Green&apos | - |
dc.subject.keywordAuthor | s function | - |
dc.subject.keywordAuthor | recursive Green&apos | - |
dc.subject.keywordAuthor | s function | - |
dc.subject.keywordAuthor | R-matrix | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | INVERSE | - |
dc.subject.keywordPlus | MATRIX | - |
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