DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, Jae Seok | ko |
dc.contributor.author | Tewari, Amit | ko |
dc.contributor.author | Shin, Changhwan | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.date.accessioned | 2019-07-23T06:20:34Z | - |
dc.date.available | 2019-07-23T06:20:34Z | - |
dc.date.created | 2019-07-23 | - |
dc.date.issued | 2019-07 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.40, no.7, pp.1076 - 1079 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/263737 | - |
dc.description.abstract | We investigated the impact of high-pressure annealing (HPA) on thememory properties of one-transistor dynamic random-access memory (1TDRAM) using a coupled geometry of a metal-ferroelectric (Hf0.5Zr0.5O2)-metal (MFM) capacitor connected in series with a gate insulator (SiO2) of a metal-oxide semiconductor field-effect transistor. The MFM capacitors were fabricated under different HPA conditions followed by the measurement of ferroelectric characteristics. The obtained results (polarization-electric field curves) were used for extracting the Landau-Khalatnikov coefficients, and these were used with the help of using Sentaurus TCAD tool, to theoretically study various characteristics of the coupled system (1TDRAM), such as sub-threshold swing (SS), memory window (MW), and ON/OFF current ratio (I-ON/I-OFF). The output reflected that the MFM associated with 550 degrees C HPA provides a wide MW (1.8-2.4 V based on area ratio), and the lowest SS (33mV/decade). Thus, the optimized HPA condition is promising in providing better results for various memory-based applications. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM | - |
dc.type | Article | - |
dc.identifier.wosid | 000473441400012 | - |
dc.identifier.scopusid | 2-s2.0-85068121668 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 1076 | - |
dc.citation.endingpage | 1079 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2019.2918797 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Yoon, Jae Seok | - |
dc.contributor.nonIdAuthor | Tewari, Amit | - |
dc.contributor.nonIdAuthor | Shin, Changhwan | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Ferroelectric films | - |
dc.subject.keywordAuthor | hafnium zirconium oxide | - |
dc.subject.keywordAuthor | high-pressure annealing | - |
dc.subject.keywordAuthor | metal-ferroelectric-metal | - |
dc.subject.keywordAuthor | nonvolatile memory | - |
dc.subject.keywordPlus | NEGATIVE CAPACITANCE | - |
dc.subject.keywordPlus | FERROELECTRICITY | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.