GaSb/InAs Heterojunction-based UTB Tunnel FETs: A first principles study
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조유철 | ko |
| dc.contributor.author | 신민철 | ko |
| dc.contributor.author | 장윤희 | ko |
| dc.date.accessioned | 2019-07-18T05:53:31Z | - |
| dc.date.available | 2019-07-18T05:53:31Z | - |
| dc.date.created | 2019-06-21 | - |
| dc.date.issued | 2019-02-15 | - |
| dc.identifier.citation | 제 26회 한국반도체학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/263507 | - |
| dc.language | English | - |
| dc.publisher | 제 26회 한국반도체학술대회 | - |
| dc.title | GaSb/InAs Heterojunction-based UTB Tunnel FETs: A first principles study | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제 26회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 강원도 웰리힐리파크 | - |
| dc.contributor.localauthor | 신민철 | - |
| dc.contributor.nonIdAuthor | 조유철 | - |
| dc.contributor.nonIdAuthor | 장윤희 | - |
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