Quantum Transport Simulations of Gate-all-around Nanowire pFETs with Arbitrary Shaped Cross-section in the Presence of Hole-phonon Interaction
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shin, Mincheol | ko |
| dc.contributor.author | LEE, HYEONGU | ko |
| dc.date.accessioned | 2019-07-18T05:41:06Z | - |
| dc.date.available | 2019-07-18T05:41:06Z | - |
| dc.date.created | 2019-06-21 | - |
| dc.date.created | 2019-06-21 | - |
| dc.date.issued | 2019-05-22 | - |
| dc.identifier.citation | IWCN 2019 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/263421 | - |
| dc.language | English | - |
| dc.publisher | IWCN 2019 | - |
| dc.title | Quantum Transport Simulations of Gate-all-around Nanowire pFETs with Arbitrary Shaped Cross-section in the Presence of Hole-phonon Interaction | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | IWCN 2019 | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Hilton Orrington Evanston, Illinois | - |
| dc.contributor.localauthor | Shin, Mincheol | - |
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