Semiconductor device, semiconductor device control method and optical switch반도체 소자, 반도체 소자 제어 방법 및 광학 스위치

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Semiconductor devices and semiconductor device control methods are described. A semiconductor device comprises a first electrode; a cell arranged on the first electrode and including a magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; and a heating element to form a thermal gradient in the first electrode.
Assignee
KAIST
Country
US (United States)
Issue Date
2019-04-30
Application Date
2018-01-11
Application Number
15868837
Registration Date
2019-04-30
Registration Number
10276780
URI
http://hdl.handle.net/10203/262457
Appears in Collection
MS-Patent(특허)
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