DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tang, Ming | ko |
dc.contributor.author | Ramos, Ana V. | ko |
dc.contributor.author | Jud, Eva | ko |
dc.contributor.author | Chung, Sung-Yoon | ko |
dc.contributor.author | Gautier-Soyer, Martine | ko |
dc.contributor.author | Cannon, Rowland M. | ko |
dc.contributor.author | Carter, W. Craig | ko |
dc.contributor.author | Chiang, Yet-Ming | ko |
dc.date.accessioned | 2019-05-15T13:27:27Z | - |
dc.date.available | 2019-05-15T13:27:27Z | - |
dc.date.created | 2019-05-13 | - |
dc.date.issued | 2008-03 | - |
dc.identifier.citation | LANGMUIR, v.24, no.5, pp.1891 - 1896 | - |
dc.identifier.issn | 0743-7463 | - |
dc.identifier.uri | http://hdl.handle.net/10203/261910 | - |
dc.description.abstract | Despite the extremely broad technical applications of the Si/SiO2 structure, the equilibrium wetting properties of silicon oxide on silicon are poorly understood. Here, we produce new results in which a solid-state buffer method is used to systematically titrate oxygen activity about the Si/SiO2 coexistence value. The equilibrium morphology at the Si(001) surface over > 8 decades of Po-2 about coexistence is revealed to be a uniform sub-stoichiometric SiOx film of sub-manometer thickness, coexisting with secondary island structures which coarsen with annealing time. A new thermodynamic method using chemical potential to stabilize and control surficial oxides in nanoscale devices is suggested. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Nanometer-scale wetting of the silicon surface by its equilibrium oxide | - |
dc.type | Article | - |
dc.identifier.wosid | 000253460200053 | - |
dc.identifier.scopusid | 2-s2.0-41849116670 | - |
dc.type.rims | ART | - |
dc.citation.volume | 24 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 1891 | - |
dc.citation.endingpage | 1896 | - |
dc.citation.publicationname | LANGMUIR | - |
dc.identifier.doi | 10.1021/la703331m | - |
dc.contributor.localauthor | Chung, Sung-Yoon | - |
dc.contributor.nonIdAuthor | Tang, Ming | - |
dc.contributor.nonIdAuthor | Ramos, Ana V. | - |
dc.contributor.nonIdAuthor | Jud, Eva | - |
dc.contributor.nonIdAuthor | Gautier-Soyer, Martine | - |
dc.contributor.nonIdAuthor | Cannon, Rowland M. | - |
dc.contributor.nonIdAuthor | Carter, W. Craig | - |
dc.contributor.nonIdAuthor | Chiang, Yet-Ming | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SIO2/SI INTERFACE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | NUCLEATION | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordPlus | ICE | - |
dc.subject.keywordPlus | SI | - |
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