DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Tae Kwon | ko |
dc.contributor.author | Kong, Dae Sol | ko |
dc.contributor.author | Jin, Da Woon | ko |
dc.contributor.author | Yun, Shin Hee | ko |
dc.contributor.author | Yang, Chan-Ho | ko |
dc.contributor.author | Jung, Jong Hoon | ko |
dc.date.accessioned | 2019-05-10T02:30:11Z | - |
dc.date.available | 2019-05-10T02:30:11Z | - |
dc.date.created | 2019-05-10 | - |
dc.date.created | 2019-05-10 | - |
dc.date.created | 2019-05-10 | - |
dc.date.created | 2019-05-10 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS, v.19, no.6, pp.728 - 732 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | http://hdl.handle.net/10203/261823 | - |
dc.description.abstract | We investigated the ferroelectricity in proton-irradiated flexible Pb(Zr0.52Ti0.48)O-3 (PZT) thick films and their non-volatile memory characteristics. The Ni-Cr metal foil substrate allowed high-quality polycrystalline PZT films with flexible functionality to be fabricated using conventional sol-gel and high-temperature annealing methods. The 10-MeV proton-irradiated PZT film exhibited an almost square polarization-electric field hysteresis curve with saturated (P-s) and remnant (P-r) polarizations of 18.9 and 17.0 mu C/cm(2), respectively; which are slightly lower than as-grown PZT with P-s = 28.7 mu C/cm(2) and P-r = 24.3 mu C/cm(2). The P-r did not decrease even after 1000 cycles of continuous bending and unbending at a bending radius of 2.14 mm and decreased slightly to similar to 80% of its initial value after 10(5) s. Although the P-r decreased to similar to 55% after 10(10 )cycles, the electric polarization remained switchable under positive and negative electric fields. These characteristics suggest that the flexible PZT films could be utilized in non-volatile memory device applications in environments with high doses of proton irradiation, such as those in aeronautics and nuclear power plants. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Proton-irradiated Pb(Zr0.52Ti0.48)O-3 thick films for flexible non-volatile memory applications | - |
dc.type | Article | - |
dc.identifier.wosid | 000464973700013 | - |
dc.identifier.scopusid | 2-s2.0-85063681999 | - |
dc.type.rims | ART | - |
dc.citation.volume | 19 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 728 | - |
dc.citation.endingpage | 732 | - |
dc.citation.publicationname | CURRENT APPLIED PHYSICS | - |
dc.identifier.doi | 10.1016/j.cap.2019.03.023 | - |
dc.identifier.kciid | ART002473732 | - |
dc.contributor.localauthor | Yang, Chan-Ho | - |
dc.contributor.nonIdAuthor | Lee, Tae Kwon | - |
dc.contributor.nonIdAuthor | Kong, Dae Sol | - |
dc.contributor.nonIdAuthor | Jin, Da Woon | - |
dc.contributor.nonIdAuthor | Jung, Jong Hoon | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Proton irradiation | - |
dc.subject.keywordAuthor | Flexible Pb(Zr0.52Ti0.48)O-3 | - |
dc.subject.keywordAuthor | Non-volatile memory | - |
dc.subject.keywordPlus | NANOGENERATOR | - |
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