Effect of annealing on the microstructural and optical properties of InAs quantum dots grown on GaAs buffer layers

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 368
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorLee, Kyong Hako
dc.contributor.authorLee H.S.ko
dc.contributor.authorLee J.Y.ko
dc.contributor.authorLee D.U.ko
dc.contributor.authorKim T.W.ko
dc.contributor.authorKim M.D.ko
dc.date.accessioned2019-04-16T05:11:30Z-
dc.date.available2019-04-16T05:11:30Z-
dc.date.created2012-02-06-
dc.identifier.citation, v.45-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/260732-
dc.languageEnglish-
dc.titleEffect of annealing on the microstructural and optical properties of InAs quantum dots grown on GaAs buffer layers-
dc.typeConference-
dc.identifier.scopusid2-s2.0-12744276033-
dc.type.rimsCONF-
dc.citation.volume45-
dc.contributor.nonIdAuthorLee H.S.-
dc.contributor.nonIdAuthorLee J.Y.-
dc.contributor.nonIdAuthorLee D.U.-
dc.contributor.nonIdAuthorKim T.W.-
dc.contributor.nonIdAuthorKim M.D.-
Appears in Collection
RIMS Conference Papers
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0