DC Field | Value | Language |
---|---|---|
dc.contributor.author | Noh, Hyeon-Kyun | ko |
dc.contributor.author | Ryu, Byungki | ko |
dc.contributor.author | Lee, Woo-Jin | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2019-04-16T01:12:53Z | - |
dc.date.available | 2019-04-16T01:12:53Z | - |
dc.date.created | 2014-01-10 | - |
dc.date.issued | 2012-07 | - |
dc.identifier.citation | 31st International Conference on the Physics of Semiconductors | - |
dc.identifier.uri | http://hdl.handle.net/10203/259601 | - |
dc.language | English | - |
dc.publisher | ICPS | - |
dc.title | Atomic and electronic structure of O-vacancy defects in amorphous In-Ga-Zn-O semiconductors | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | 31st International Conference on the Physics of Semiconductors | - |
dc.identifier.conferencecountry | SZ | - |
dc.identifier.conferencelocation | Zurich | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Noh, Hyeon-Kyun | - |
dc.contributor.nonIdAuthor | Ryu, Byungki | - |
dc.contributor.nonIdAuthor | Lee, Woo-Jin | - |
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