Novel Aqueous Solution Processed Fluorine-doped Indium Zinc Oxide (F-IZO) Thin-Film Transistors Fabricated at 200℃
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Bae, Byeong-Soo | ko |
| dc.contributor.author | Seo, Jin-Suk | ko |
| dc.contributor.author | Jeon, Jun-Hyuck | ko |
| dc.contributor.author | Hwang, Young Hwan | ko |
| dc.contributor.author | Ryu, Min Ki | ko |
| dc.contributor.author | Ryu, Sang-Hee Ko | ko |
| dc.date.accessioned | 2019-04-16T01:11:20Z | - |
| dc.date.available | 2019-04-16T01:11:20Z | - |
| dc.date.created | 2014-01-08 | - |
| dc.date.issued | 2012-08 | - |
| dc.identifier.citation | 2012 International Meeting on Information Display | - |
| dc.identifier.uri | http://hdl.handle.net/10203/259556 | - |
| dc.language | English | - |
| dc.publisher | IMID | - |
| dc.title | Novel Aqueous Solution Processed Fluorine-doped Indium Zinc Oxide (F-IZO) Thin-Film Transistors Fabricated at 200℃ | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2012 International Meeting on Information Display | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | Exco, Daegu, Korea | - |
| dc.contributor.localauthor | Bae, Byeong-Soo | - |
| dc.contributor.nonIdAuthor | Seo, Jin-Suk | - |
| dc.contributor.nonIdAuthor | Jeon, Jun-Hyuck | - |
| dc.contributor.nonIdAuthor | Hwang, Young Hwan | - |
| dc.contributor.nonIdAuthor | Ryu, Min Ki | - |
| dc.contributor.nonIdAuthor | Ryu, Sang-Hee Ko | - |
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