Structural and electrical properties of Cu(In0.7Ga0.3)Se2 thin film prepared by sputtering or evaporation process of (In,Ga)2Se3 precursor

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dc.contributor.author정광선ko
dc.contributor.author김승태ko
dc.contributor.authorKwon, Hyuk-Sangko
dc.contributor.author안병태ko
dc.date.accessioned2019-04-15T21:12:43Z-
dc.date.available2019-04-15T21:12:43Z-
dc.date.created2014-01-08-
dc.date.issued2013-05-23-
dc.identifier.citation2013 한국재료학회 춘계학술발표대회-
dc.identifier.urihttp://hdl.handle.net/10203/258404-
dc.languageKorean-
dc.publisher한국재료학회-
dc.titleStructural and electrical properties of Cu(In0.7Ga0.3)Se2 thin film prepared by sputtering or evaporation process of (In,Ga)2Se3 precursor-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname2013 한국재료학회 춘계학술발표대회-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocation여수-
dc.contributor.localauthorKwon, Hyuk-Sang-
dc.contributor.localauthor안병태-
dc.contributor.nonIdAuthor정광선-
dc.contributor.nonIdAuthor김승태-
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MS-Conference Papers(학술회의논문)
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