단일집적회로의칩내에수직형바이폴라트랜지스터와고압CMOS트랜지스터를형성하는공정PROCESS FOR FORMING BIPOLAR TRANSISTOR AND HIGH VOLTAGE CMOS TRANSISTOR IN A SINGLE IC CHIP

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dc.contributor.author시스템생성자ko
dc.contributor.author올터커크코히아크ko
dc.contributor.author더글러스로버트스나벨ko
dc.contributor.author조나단더글러스맨ko
dc.contributor.author잭두아네패리쉬ko
dc.contributor.author파울러셀로랜드스3세ko
dc.date.accessioned2019-04-15T20:14:23Z-
dc.date.available2019-04-15T20:14:23Z-
dc.date.issued1994-01-25-
dc.identifier.urihttp://hdl.handle.net/10203/258034-
dc.description.abstract내용 없음.-
dc.title단일집적회로의칩내에수직형바이폴라트랜지스터와고압CMOS트랜지스터를형성하는공정-
dc.title.alternativePROCESS FOR FORMING BIPOLAR TRANSISTOR AND HIGH VOLTAGE CMOS TRANSISTOR IN A SINGLE IC CHIP-
dc.typePatent-
dc.type.rimsPAT-
dc.contributor.localauthor시스템생성자-
dc.contributor.nonIdAuthor올터커크코히아크-
dc.contributor.nonIdAuthor더글러스로버트스나벨-
dc.contributor.nonIdAuthor조나단더글러스맨-
dc.contributor.nonIdAuthor잭두아네패리쉬-
dc.contributor.nonIdAuthor파울러셀로랜드스3세-
dc.contributor.assignee델코 엘렉트로닉스 코포레이션-
dc.identifier.iprsType특허-
dc.identifier.patentApplicationNumber10-1990-0003675-
dc.identifier.patentRegistrationNumber10-0070305-0000-
dc.date.application1990-03-17-
dc.date.registration1994-01-25-
dc.publisher.countryKO-
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