DC Field | Value | Language |
---|---|---|
dc.contributor.author | 권영세 | ko |
dc.contributor.author | 유태경 | ko |
dc.date.accessioned | 2019-04-15T18:35:21Z | - |
dc.date.available | 2019-04-15T18:35:21Z | - |
dc.date.issued | 1990-08-21 | - |
dc.identifier.uri | http://hdl.handle.net/10203/257303 | - |
dc.description.abstract | A method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor LASER diode by a selective epitaxy method which is capable of forming naturally a 45.degree. mirror reflective face during the epitaxy method itself. The method comprises the steps of forming a silicon oxide or silicon nitride layer on one side of a n-type single crystal GaAs substrate as a mask, removing the mask of the regions each for forming a 45.degree. mirror reflective face and a LASER diode by use of a photolithography and a chemicaletching, forming the two layers by removing the photoresistor on the remaining mask after a selective epitaxy process and converting a slant face of the LASER diode into a vertical face, depositing a n-type metal layer on the other side of the substrate, and carrying out a heat treatment. | - |
dc.title | Method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor laser diode | - |
dc.title.alternative | 선택적 에피택시법에 의한 표면방출형 AlGaAs/GaAs 레이저 다이오드의 제조방법 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | 권영세 | - |
dc.contributor.nonIdAuthor | 유태경 | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 07344317 | - |
dc.identifier.patentRegistrationNumber | 4950622 | - |
dc.date.application | 1989-04-27 | - |
dc.date.registration | 1990-08-21 | - |
dc.publisher.country | US | - |
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