Vacancy behavior in Czochralski silicon growth

Cited 3 time in webofscience Cited 3 time in scopus
  • Hit : 330
  • Download : 0
The vacancy defect behavior in silicon crystal growth has been investigated by kinetic Monte Carlo and continuum simulations. The vacancy concentration distributions in silicon crystal were obtained from continuum model simulations corresponding to experimental conditions and then the vacancy clusters distribution obtained from kinetic lattice Monte Carlo simulations. At the temperature above 1470 K, the diffusivity was almost constant because the clusters were not formed. In the clustering temperature region (1370-1270 K), the larger clusters were generated at the higher temperature, the smaller clusters were generated at the lower temperature. While the vacancy concentration led to increase in the number of clusters, the mean size of clusters was irrespective of the vacancy concentrations. Clustering phenomena were very susceptible to temperature and vacancy concentrations. The total number of vacancy clusters was linearly proportion to the crystal pull rate. The radial distribution of clusters obtained from multi-scale simulations was in good agreement with the distribution of voids in the experimental data. (C) 2009 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2009-07
Language
English
Article Type
Article
Keywords

POINT-DEFECTS; MELT-GROWTH; DIFFUSION; CRYSTAL; SIMULATION; SI

Citation

JOURNAL OF CRYSTAL GROWTH, v.311, no.14, pp.3592 - 3597

ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2009.04.044
URI
http://hdl.handle.net/10203/255634
Appears in Collection
CBE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 3 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0