DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Min Su | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.date.accessioned | 2019-04-15T15:11:37Z | - |
dc.date.available | 2019-04-15T15:11:37Z | - |
dc.date.created | 2013-09-26 | - |
dc.date.issued | 2013-08 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.60, no.4, pp.3084 - 3091 | - |
dc.identifier.issn | 0018-9499 | - |
dc.identifier.uri | http://hdl.handle.net/10203/254749 | - |
dc.description.abstract | A dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was evaluated to demonstrate its effectiveness at mitigating radiation-induced leakage currents in a conventional n-MOSFET. In the proposed DGA n-MOSFET layout, radiation-induced leakage currents are settled by isolating both the source and drain from the sidewall oxides using a P+ layer and dummy gates. Moreover, the dummy gates and dummy Metal-1 layers are expected to suppress the charge trapping in the sidewall oxides. The inherent structure of the DGA n-MOSFET supplements the drawbacks of the enclosed layout transistor, which is also proposed in order to improve radiation tolerance characteristics. The V-g - I-d simulation results of the DGA n-MOSFET layout demonstrated the effectiveness of eliminating such radiation-induced leakage current paths. Furthermore, the radiation exposure experimental results obtained with the fabricated DGA n-MOSFET layout also exhibited good performance with regard to the total ionizing dose tolerance. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | TECHNOLOGIES | - |
dc.subject | CAPACITORS | - |
dc.subject | DEVICES | - |
dc.subject | OXIDES | - |
dc.subject | CO-60 | - |
dc.subject | CMOS | - |
dc.title | Dummy Gate-Assisted n-MOSFET Layout for a Radiation-Tolerant Integrated Circuit | - |
dc.type | Article | - |
dc.identifier.wosid | 000323451800031 | - |
dc.identifier.scopusid | 2-s2.0-84882876865 | - |
dc.type.rims | ART | - |
dc.citation.volume | 60 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 3084 | - |
dc.citation.endingpage | 3091 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
dc.identifier.doi | 10.1109/TNS.2013.2268390 | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Lee, Min Su | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Dummy gate-assisted n-MOSFET layout | - |
dc.subject.keywordAuthor | layout modification | - |
dc.subject.keywordAuthor | radiation hardening | - |
dc.subject.keywordAuthor | radiation-induced leakage current | - |
dc.subject.keywordAuthor | total ionizing dose | - |
dc.subject.keywordPlus | TECHNOLOGIES | - |
dc.subject.keywordPlus | CAPACITORS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | OXIDES | - |
dc.subject.keywordPlus | CO-60 | - |
dc.subject.keywordPlus | CMOS | - |
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