Memory controller, semiconductor memory system and operating method thereof메모리 컨트롤러, 반도체 메모리 시스템 및 그것의 동작 방법

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An operation method of a memory controller includes: reading a second data from memory cells when a hard decision error correction decoding operation based on a first data read from the memory cells fails; calculating a LLR of each bit-data included in the first data by using the first and second data; and performing a soft decision error correction decoding operation based on the LLR, wherein the memory cells include a first and second memory cell, wherein the first data includes first-bit-data read from the first and second memory cell, wherein the second data includes second-bit-data read from the first and second memory cell, wherein the LLR is a LLR of the first-bit-data read from the first memory cell calculated based on the first bit and a second bit read from the first memory cell and a first bit and a second bit read from the second memory cell.
Assignee
SK hynix Inc, KAIST
Country
US (United States)
Issue Date
2019-02-05
Application Date
2017-05-19
Application Number
15599576
Registration Date
2019-02-05
Registration Number
10200063
URI
http://hdl.handle.net/10203/254025
Appears in Collection
EE-Patent(특허)
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