DC Field | Value | Language |
---|---|---|
dc.contributor.author | Mancini, L. | ko |
dc.contributor.author | Morassi, M. | ko |
dc.contributor.author | Sinito, C. | ko |
dc.contributor.author | Brandt, O. | ko |
dc.contributor.author | Geelhaar, L. | ko |
dc.contributor.author | Song, Hyun Gyu | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Guan, N. | ko |
dc.contributor.author | Cavanna, A. | ko |
dc.contributor.author | Njeim, J. | ko |
dc.contributor.author | Madouri, A. | ko |
dc.contributor.author | Barbier, C. | ko |
dc.contributor.author | Largeau, L. | ko |
dc.contributor.author | Babichev, A. | ko |
dc.contributor.author | Julien, F. H. | ko |
dc.contributor.author | Travers, L. | ko |
dc.contributor.author | Oehler, F. | ko |
dc.contributor.author | Gogneau, N. | ko |
dc.contributor.author | Harmand, J-C | ko |
dc.contributor.author | Tchernycheva, M. | ko |
dc.date.accessioned | 2019-04-15T14:10:44Z | - |
dc.date.available | 2019-04-15T14:10:44Z | - |
dc.date.created | 2019-04-03 | - |
dc.date.created | 2019-04-03 | - |
dc.date.issued | 2019-05 | - |
dc.identifier.citation | NANOTECHNOLOGY, v.30, no.21, pp.214005 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/10203/253920 | - |
dc.description.abstract | Optical properties of GaN nanowires (NWs) grown on chemical vapor deposited-graphene transferred on an amorphous support are reported. The growth temperature was optimized to achieve a high NW density with a perfect selectivity with respect to a SiO2 surface. The growth temperature window was found to be rather narrow (815 degrees C +/- 5 degrees C). Steady-state and time-resolved photoluminescence from GaN NWs grown on graphene was compared with the results for GaN NWs grown on conventional substrates within the same molecular beam epitaxy reactor showing a comparable optical quality for different substrates. Growth at temperatures above 820 degrees C led to a strong NW density reduction accompanied with a diameter narrowing. This morphology change leads to a spectral blueshift of the donor-bound exciton emission line due to either surface stress or dielectric confinement. Graphene multi-layered micro-domains were explored as a way to arrange GaN NWs in a hollow hexagonal pattern. The NWs grown on these domains show a luminescence spectral linewidth as low as 0.28 meV (close to the set-up resolution limit). | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Optical properties of GaN nanowires grown on chemical vapor deposited-graphene | - |
dc.type | Article | - |
dc.identifier.wosid | 000461438100001 | - |
dc.identifier.scopusid | 2-s2.0-85063277876 | - |
dc.type.rims | ART | - |
dc.citation.volume | 30 | - |
dc.citation.issue | 21 | - |
dc.citation.beginningpage | 214005 | - |
dc.citation.publicationname | NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1088/1361-6528/ab0570 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Mancini, L. | - |
dc.contributor.nonIdAuthor | Morassi, M. | - |
dc.contributor.nonIdAuthor | Sinito, C. | - |
dc.contributor.nonIdAuthor | Brandt, O. | - |
dc.contributor.nonIdAuthor | Geelhaar, L. | - |
dc.contributor.nonIdAuthor | Guan, N. | - |
dc.contributor.nonIdAuthor | Cavanna, A. | - |
dc.contributor.nonIdAuthor | Njeim, J. | - |
dc.contributor.nonIdAuthor | Madouri, A. | - |
dc.contributor.nonIdAuthor | Barbier, C. | - |
dc.contributor.nonIdAuthor | Largeau, L. | - |
dc.contributor.nonIdAuthor | Babichev, A. | - |
dc.contributor.nonIdAuthor | Julien, F. H. | - |
dc.contributor.nonIdAuthor | Travers, L. | - |
dc.contributor.nonIdAuthor | Oehler, F. | - |
dc.contributor.nonIdAuthor | Gogneau, N. | - |
dc.contributor.nonIdAuthor | Harmand, J-C | - |
dc.contributor.nonIdAuthor | Tchernycheva, M. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | GaN growth on graphene | - |
dc.subject.keywordAuthor | van der Waals epitaxy | - |
dc.subject.keywordAuthor | graphene micro-domains | - |
dc.subject.keywordAuthor | photoluminescence | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | DER-WAALS EPITAXY | - |
dc.subject.keywordPlus | HIGH-QUALITY | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | EXCITONIC TRANSITIONS | - |
dc.subject.keywordPlus | LAYER GRAPHENE | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
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