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4H-SiC 금속-절연층-반도체 구조에서의 NO 후열처리 시간에 따른 전기적 특성 분석 = Electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitor by different NO post-oxidation annealing exposure timelink

임천용; Lim, Cheon-Yong; et al, 한국과학기술원, 2014

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