DC Field | Value | Language |
---|---|---|
dc.contributor.author | Soh, JW | ko |
dc.contributor.author | Jang, SS | ko |
dc.contributor.author | Jeong, IS | ko |
dc.contributor.author | Lee, Won-Jong | ko |
dc.date.accessioned | 2011-09-30T04:35:55Z | - |
dc.date.available | 2011-09-30T04:35:55Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-06 | - |
dc.identifier.citation | THIN SOLID FILMS, v.279, no.1-2, pp.17 - 22 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/25316 | - |
dc.description.abstract | AIN films were deposited on silicon substrates at low temperatures (300-500 degrees C) by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) using trimethylaluminum, N-2 and H-2 gases. The degree of c-axis orientation, crystallinity, functional groups and chemical composition of the films were investigated for various deposition conditions. The degree of c-axis orientation depends on the substrate surface condition and it improves with increasing substrate temperature as well as with increasing microwave power. A c-axis oriented (sigma = 4.3 degrees) AlN film was prepared at 500 degrees C. The importance of the system design which allows the precursor to be dissociated efficiently by the ECR plasma is discussed. | - |
dc.description.sponsorship | The authors acknowledge the support of Samsung Electro-Mechanics Co., Ltd. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELSEVIER SCIENCE SA LAUSANNE | - |
dc.subject | THIN-FILMS | - |
dc.subject | TEMPERATURE | - |
dc.title | C-axis orientation of AIN films prepared by ECR PECVD | - |
dc.type | Article | - |
dc.identifier.wosid | A1996VB37200006 | - |
dc.identifier.scopusid | 2-s2.0-0030164387 | - |
dc.type.rims | ART | - |
dc.citation.volume | 279 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 17 | - |
dc.citation.endingpage | 22 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Won-Jong | - |
dc.contributor.nonIdAuthor | Soh, JW | - |
dc.contributor.nonIdAuthor | Jang, SS | - |
dc.contributor.nonIdAuthor | Jeong, IS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | aluminium nitride | - |
dc.subject.keywordAuthor | chemical vapour deposition | - |
dc.subject.keywordAuthor | plasma processing and deposition | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
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