DC Field | Value | Language |
---|---|---|
dc.contributor.author | Byun, C | ko |
dc.contributor.author | Kim, YI | ko |
dc.contributor.author | Lee, Won-Jong | ko |
dc.contributor.author | Lee, BW | ko |
dc.date.accessioned | 2011-09-19T05:25:38Z | - |
dc.date.available | 2011-09-19T05:25:38Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-04 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.36, no.9A , pp.5588 - 5589 | - |
dc.identifier.uri | http://hdl.handle.net/10203/25233 | - |
dc.description.abstract | Metal/ferroelectric/insulator/semiconductor (MFIS) capacitors were prepared by depositing PbTiO3 and TiO2 layers on Si(100) wafers at 450 and 550 degrees C using metal organic chemical vapor deposition (MOCVD). The C-V properties of the capacitors depend on the quality of TiO2 films and TiO2/Si interfaces. The TiO2 film could serve as an effective buffer layer against the Pb diffusion and provide good C-V properties as long as it was deposited at proper substrate temperature with proper thickness. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | FILMS | - |
dc.title | Effect of a TiO2 buffer layer on the CV properties of Pt/PbTiO3/TiO2/Si structure | - |
dc.type | Article | - |
dc.identifier.wosid | A1997YE80400038 | - |
dc.identifier.scopusid | 2-s2.0-0031224355 | - |
dc.type.rims | ART | - |
dc.citation.volume | 36 | - |
dc.citation.issue | 9A | - |
dc.citation.beginningpage | 5588 | - |
dc.citation.endingpage | 5589 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Won-Jong | - |
dc.contributor.nonIdAuthor | Byun, C | - |
dc.contributor.nonIdAuthor | Kim, YI | - |
dc.contributor.nonIdAuthor | Lee, BW | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | MFIS | - |
dc.subject.keywordAuthor | ferroelectrics | - |
dc.subject.keywordAuthor | thin film | - |
dc.subject.keywordAuthor | PbTiO3 | - |
dc.subject.keywordAuthor | TiO2 | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordAuthor | C-V | - |
dc.subject.keywordPlus | FILMS | - |
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