DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, JS | ko |
dc.contributor.author | Lee, Won-Jong | ko |
dc.date.accessioned | 2011-09-19T05:16:35Z | - |
dc.date.available | 2011-09-19T05:16:35Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-11 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.36, no.11, pp.6909 - 6914 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/25231 | - |
dc.description.abstract | The effects of seed layers on the characteristics of La-doped lead zirconate titanate (PLZT) thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) were investigated. The seed layers used were lead oxide, titanate, lead titanate and La-doped lead titanate. PLZT films with stoichiometric composition and perovskite single phase were fabricated using titanate, lead titanate and La-doped lead titanate as seed layers. Among them, PLT was the most effective seed layer in regard to surface morphology, crystallinity and electrical properties of the PLZT films. The effects of seed layers were very remarkable on the Pt/SiO2/Si substrate, however, less significant on the Pt/Ti/SiO2/Si substrate because the Ti atoms out-diffused from the Ti underlayer to the substrate surface and exhibited seed-like characteristics for the formation of perovskite phase nuclei. | - |
dc.description.sponsorship | The authors acknowledge the support of Samsung Electronics Co. for this research. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.subject | DRAM APPLICATIONS | - |
dc.subject | BUFFER LAYER | - |
dc.subject | (PB | - |
dc.subject | TEMPERATURE | - |
dc.subject | LA)(ZR | - |
dc.subject | PB(ZR | - |
dc.title | Effects of seed layers on the characteristics of (Pb,La)(Zr,Ti)O-3 thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000071172300064 | - |
dc.identifier.scopusid | 2-s2.0-0031271046 | - |
dc.type.rims | ART | - |
dc.citation.volume | 36 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 6909 | - |
dc.citation.endingpage | 6914 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Won-Jong | - |
dc.contributor.nonIdAuthor | Shin, JS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | PLZT | - |
dc.subject.keywordAuthor | film | - |
dc.subject.keywordAuthor | ECR PECVD | - |
dc.subject.keywordAuthor | seed layer | - |
dc.subject.keywordPlus | DRAM APPLICATIONS | - |
dc.subject.keywordPlus | BUFFER LAYER | - |
dc.subject.keywordPlus | (PB | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | LA)(ZR | - |
dc.subject.keywordPlus | PB(ZR | - |
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