DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chung, Su Ock | - |
dc.contributor.author | Kim, Jae Whan | - |
dc.contributor.author | Kim, Sung Tae | - |
dc.contributor.author | Kim, Geun Hong | - |
dc.contributor.author | Lee, Won Jong | - |
dc.date.accessioned | 2011-09-19T04:43:40Z | - |
dc.date.available | 2011-09-19T04:43:40Z | - |
dc.date.issued | 1997-04 | - |
dc.identifier.citation | Materials Chemistry and Physics, Vol.53, pp.60-66 | en |
dc.identifier.issn | 0254-0584 | - |
dc.identifier.uri | http://hdl.handle.net/10203/25224 | - |
dc.description.abstract | Perovskite lead zirconate titanate (PZT) thin films were fabricated on Pt(70 nm)/Ti(100 nm) SiO2/Si substrates at 470oC and 500oC, respectively, by electron cyclotron resonance plasma-enhanced chemical vapor deposition using metal organic sources. A Pb-deficient interfacial layer was observed between the PZT film and Pt substrate by cross-sectional TEM, which seems to distort the C-V hysteresis loop of the Pt/PZT/Pt capacitor. PZT thin films deposited at 500oC had thinner interfacial layers and showed better electric properties than those deposited at 470oC. Effects of the interfacial layer and post-heat treatment on the microstructure and electric properties of PZT thin films were investigated. | en |
dc.description.sponsorship | The authors acknowledge the support of Samsung Electronics Co. Ltd. for this work. | en |
dc.language.iso | en_US | en |
dc.publisher | Elsevier | en |
dc.subject | PZT | en |
dc.subject | ECR PECVD | en |
dc.subject | Metal organic source | en |
dc.subject | Microstructure | en |
dc.subject | Electric properties | en |
dc.title | Microstructure and electric properties of the PZT thin films fabricated by ECR PECVD: The effects of an interfacial layer and rapid thermal annealing | en |
dc.type | Article | en |
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