DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Jun-Hyuck | ko |
dc.contributor.author | Hwang, Young-Hwan | ko |
dc.contributor.author | Bae, Byeong-Soo | ko |
dc.contributor.author | Kwon, H. L. | ko |
dc.contributor.author | Kang, H. J. | ko |
dc.date.accessioned | 2011-09-05T05:38:14Z | - |
dc.date.available | 2011-09-05T05:38:14Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-05 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.96, no.21, pp.212109 - 212109 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/25096 | - |
dc.description.abstract | Aluminum was added to a solution-processed conductive indium tin oxide thin film to be optimized as a channel layer for a thin film transistor (TFT). The conductive crystalline thin film becomes an amorphous semiconductor as the band gap enlarges with increasing Al content. Also, systematic variation in TFT characteristics was observed clearly, displaying transformation to a semiconductor. At the final composition of (Al(2)O(3))(0.3)(In(2)O(3))(0.6)(SnO(2))(0.1), the film channel layer exhibits a high mobility of 13.3 cm(2) V(-1) s(-1), a high on-to-off ratio of 10(7) and a low subthreshold swing of 1.01 V/dec. (C) 2010 American Institute of Physics. [doi:10.1063/1.3442482] | - |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea NRF funded by the Ministry of Education, Science and Technology Grant No. CAFDC-20100009898 and by the Ministry of Knowledge Economy MKE and Korea Institute for Advancement in Technology KIAT through the Workforce Development Program in Strategic Technology. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | TEMPERATURE | - |
dc.title | Addition of aluminum to solution processed conductive indium tin oxide thin film for an oxide thin film transistor | - |
dc.type | Article | - |
dc.identifier.wosid | 000278183200040 | - |
dc.identifier.scopusid | 2-s2.0-77956239368 | - |
dc.type.rims | ART | - |
dc.citation.volume | 96 | - |
dc.citation.issue | 21 | - |
dc.citation.beginningpage | 212109 | - |
dc.citation.endingpage | 212109 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Bae, Byeong-Soo | - |
dc.contributor.nonIdAuthor | Kwon, H. L. | - |
dc.contributor.nonIdAuthor | Kang, H. J. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | aluminium compounds | - |
dc.subject.keywordAuthor | amorphous semiconductors | - |
dc.subject.keywordAuthor | indium compounds | - |
dc.subject.keywordAuthor | semiconductor thin films | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | tin compounds | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.